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DMN4800LSS
N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
* Low On-Resistance * 14m @ VGS = 10V * 20m @ VGS = 4.5V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
* * * * * * * * Case: SOP-8L Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.072g (approximate)
NEW PRODUCT
* * * * * *
S S S G
TOP VIEW TOP VIEW Internal Schematic
D D D D
Maximum Ratings @TA = 25C unless otherwise specified
Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 3) Pulsed Drain Current (Note 4) Symbol VDSS VGSS Steady State TA = 25C TA = 70C ID IDM Value 30 25 9
7
Units V V A A
50
Thermal Characteristics @TA = 25C unless otherwise specified
Characteristic Total Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Notes:
Symbol PD RJA TJ, TSTG
Value 1.46 86 -55 to +150
Unit W C/W C
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature.
DMN4800LSS
Document number: DS31736 Rev. 5 - 2
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DMN4800LSS
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Notes:
@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gfs VSD Ciss Coss Crss RG Qg Qgs Qgd td(on) tr td(off) tf Min 30 0.8 Typ 1.2 11 14 8 0.72 798 128 122 1.37 8.7 1.7 2.4 5.03 4.50 26.33 8.55 Max 1 100 1.6 14 20 0.94 Unit V A nA V m S V pF pF pF nC Test Condition VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 9A VGS = 4.5V, ID = 7A VDS = 10V, ID = 9A VGS = 0V, IS = 1A VDS = 10V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VGS = 5V, VDS = 15V, ID = 9A
NEW PRODUCT
ns
VDD = 15V, VGEN = 10V, RL = 15, RG = 6.0, ID = 1A
5. Short duration pulse test used to minimize self-heating effect.
30
VGS = 10V
30
VDS = 5V
25 ID, DRAIN CURRENT (A)
VGS = 4.5V
25 ID, DRAIN CURRENT (A)
20
VGS = 3.0V
20
15
15
10
VGS = 2.5V
10
TA = 150C TA = 125C
5
VGS = 2.0V
5 0 2 1
TA = 85C TA = 25C TA = -55C
0 0
0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic
1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic
3
DMN4800LSS
Document number: DS31736 Rev. 5 - 2
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(c) Diodes Incorporated
DMN4800LSS
RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.08 0.07 0.06 0.05 0.04 0.03 0.02
VGS = 4.5V VGS = 2.5V
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.03
VGS = 4.5V TA = 150C TA = 125C
0.02
TA = 85C
NEW PRODUCT
TA = 25C
0.01
TA = -55C
0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30
0 0 5 10 15 20 ID, DRAIN CURRENT (A) 25 30
Fig. 4 Typical On-Resistance vs. Drain Current and Temperature
RDSON , DRAIN-SOURCE ON-RESISTANCE () 0.03 0.025
1.8 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6
1.4
0.02
VGS = 4.5V ID = 10A
1.2
0.015
1.0
0.01
VGS = 10V ID = 11.6A
VGS = 4.5V ID = 10A
0.8
VGS = 10V ID = 11.6A
0.005
0.6 -50
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C)
0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature
Fig. 5 On-Resistance Variation with Temperature
1.6 VGS(TH), GATE THRESHOLD VOLTAGE (V)
20
TA = 25C
1.2
ID = 1mA
IS, SOURCE CURRENT (A)
16
ID = 250A
12
0.8
8
0.4
4
0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0 0.4
0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current
DMN4800LSS
Document number: DS31736 Rev. 5 - 2
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(c) Diodes Incorporated
DMN4800LSS
10,000
10
VGS, GATE-SOURCE VOLTAGE (V)
8
C, CAPACITANCE (pF)
1,000
Ciss
6
NEW PRODUCT
ID = 11.6A ID = 9A
100
Coss Crss
4
2
10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 30
0 0 2 4 6 8 10 12 14 16 QG, TOTAL GATE CHARGE (nC) Fig. 10 Total Gate Charge
10,000
T A = 150C
IDSS, LEAKAGE CURRENT (nA)
1,000
T A = 125C
100
T A = 85C
10
TA = 25C
1 0
T A = -55C
5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V)
30
Fig. 11 Typical Leakage Current vs. Drain-Source Voltage
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0.1
D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 85C/W P(pk)
D = 0.02
0.01
D = 0.01 D = 0.005
t1
D = Single Pulse
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2
0.001 0.0001
0.001
0.01
0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response
100
1,000
DMN4800LSS
Document number: DS31736 Rev. 5 - 2
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July 2009
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DMN4800LSS
Ordering Information
Part Number DMN4800LSS-13
Notes:
(Note 6) Case SOP-8L Packaging 2500/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
NEW PRODUCT
Marking Information
Top View
8 5
Logo
N4800LS YY WW
Part no.
Week: 01 ~ 52 Year: "09" = 2009
1 4
Package Outline Dimensions
SOP-8L Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm
E1 E A1 L
0.254
Gauge Plane Seating Plane
Detail `A'
h 45 A2 A A3 e D b 7~9
Detail `A'
Suggested Pad Layout
X
C1 C2 Y
Dimensions X Y C1 C2
Value (in mm) 0.60 1.55 5.4 1.27
DMN4800LSS
Document number: DS31736 Rev. 5 - 2
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July 2009
(c) Diodes Incorporated
DMN4800LSS
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
NEW PRODUCT
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated www.diodes.com
DMN4800LSS
Document number: DS31736 Rev. 5 - 2
6 of 6 www.diodes.com
July 2009
(c) Diodes Incorporated

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